Papers – Page 7 – TechConnect Briefs

Challenges in Compact Modeling for RF and Microwave Applications

Niknejad A., Dunga M., Heydari B., Wan H., Lin C.H., Emami S., Doan C., Xi X., He J., Heydari B., Hu C., University of California at Berkeley, US

Commercial CMOS chips routinely operate at frequencies up to 5 GHz and exciting new opportunities exists in higher frequency bands such as 3-10 GHz, 17 GHz, 24 GHz, and 60 GHz. Many research groups have [...]

RF-MOSFET Model Parameter Extraction with HiSIM

Miura-Mattausch M., Sadachika N., Murakawa M., Mimura S., Higuchi T., Itoh K., Inagaki R., Iguchi Y., Hiroshima University, JP

This paper discusses a feasibility of an automatic parameter extraction method with the GA (Genetic Algorithm) for surface-potential-based MOSFET model HiSIM (Hiroshima-university STARC IGFET Model), where all device characteristics are described as functions of the [...]

Analytic Solution for the Drain Current of Undoped Symmetric Dual-Gate MOSFET

Ortiz-Conde A., García-Sánchez F.J., Malobabic S., Muci J., Universidad Simón Bolívar, VE

A potential-based drain current model is presented for nanoscale undoped-body symmetric double gate MOSFETs. It is based on a fully coherent physical description and consists of a single analytic equation that includes both drift and [...]

Physics-Based, Non-Charge-Sheet Compact Modeling of Double-Gate MOSFETs

Lu H., Taur Y., University of California at San Diego, US

A physics-based, non-charge-sheet analytic potential model is presented for undoped (or lightly doped) Double Gate (DG) MOSFETs. With only the mobile charge term included, Poisson’s equation is rigorously solved and the electrostatic potential is derived [...]

Compact Model of Multiple-gate SOI MOSFETs

Iñiguez B., Hamid H.A., Jiménez D., Roig J., Universitat Rovira i Virgili, ES

In this work we present compact modelling schemes, for the undoped nanoscale multiple-gate MOSFET, suitable for design and projection of these devices. The proposed models have a physical basis and assume well-tempered multiple-gate MOSFETs; i.e., [...]

Modeling and Characterization of High Frequency Effects in ULSI Interconnects

Arora N.D., Song L., Cadence Design Systems, US

This paper discusses the accurate modeling of resistance R, inductance L and capacitance C in sub-100nm process node and their impacts on high frequency effects such as delay, crosstalk, and power/ground bounce. Models of interconnect [...]

Correlated Noise Modeling and Simulation

McAndrew C., Coram G., Blaum A., Pilloud O., Freescale Semiconductor, US

This paper addresses several issues in noise modeling and simulation. It shows how correlated noise can be implemented in Verilog-A, and presents a new and simple technique to simulate the noise correlation coefficient using only [...]

The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs

Deen J., Ranuárez J.C., Chen C-H, McMaster University, CA

The impact of the gate tunneling current (GTC) on the noise performance of MOSFETs with very thin gate oxides is studied by developing analytical expressions for the four parameters that describe the noise performance of [...]

Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials

Dutton R.W., Liu Y., Choi C-H, Chen T.W., Stanford University, US

This simulation work discusses the impact of direct gate tunneling on effective mobility extraction methods, particularly the Inversion Charge Pumping (ICP) method proposed recently for transistors with high-k gate dielectrics. The valence-band electron gate tunneling [...]

Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches

Zhou X., Chiah S.B., Chandrasekaran K., See G.H., Shangguan W.Z., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

This paper outlines the key features and advantages of the unified regional charge-based approach to MOSFET compact charge modeling in comparison with surfacepotential- based approaches. Physical piecewise solutions are regionally derived from Pao–Sah equation, in [...]