This paper outlines the key features and advantages of the unified regional charge-based approach to MOSFET compact charge modeling in comparison with surfacepotential- based approaches. Physical piecewise solutions are regionally derived from Pao–Sah equation, in which bulk charge is modeled by direct addition of accumulation and depletion charges based on the unified regional (source-end) surface potential. Drain-bias-dependent bulk and inversion charges are modeled with the unified regional charges in strong inversion using the non-pinned surface potential. Results have been compared with the iterative solutions and validated with numerical data. It has been extended to poly-accumulation/depletion/inversion effects with explicitly coupled quantum-mechanical effect as well as to strained-Si MOSFETs within the same unified model.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 25 - 30
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoparticle Synthesis & Applications