The impact of the gate tunneling current (GTC) on the noise performance of MOSFETs with very thin gate oxides is studied by developing analytical expressions for the four parameters that describe the noise performance of the MOSFET. It is found that the contribution of the GTC is most significant at low frequencies and that the frequencies at which this effect is important can go well into the Giga-Hertz range as the oxide thickness is reduced.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 35 - 39
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoparticle Synthesis & Applications