Mobility Extraction and Compact Modeling for FETs Using High-K Gate Materials

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This simulation work discusses the impact of direct gate tunneling on effective mobility extraction methods, particularly the Inversion Charge Pumping (ICP) method proposed recently for transistors with high-k gate dielectrics. The valence-band electron gate tunneling (VBET)-induced substrate current is found to be critical to correctly reconstructing the drain current at high gate biases. The ICP technique is shown to be error-prone in the presence of non-negligible gate tunneling currents. The importance of the compact modeling of the charge pumping effect is also discussed for transistors operating in the large signal, non-quasi-static (NQS) regime. The channel segmentation approach is demonstrated to be suitable for such a purpose.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 31 - 34
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0