Chen C-H – TechConnect Briefs

Compact MEMS/NEMS Characterization Platform Using a DVD Optical Pick-up Unit with Optical Imaging Function

Chen C-H, Larsen T., Schmid S., Liao H-S, Hwang I-S, Boisen A., Hwu E-T, Academia Sinica, TW

We present a compact, simple and efficient platform for MEMS/NEMS characterization. In this platform, a DVD optical pickup unit (OPU) is combined with a CCD camera. A nano-scale resolution long range X-Y-Z linear stage below [...]

Narrow Fin Width Effect of HKMG Bulk FinFET Devices

Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Li Y., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Hsu S.-C., Huang W.-T., Yang C.-M., Chen C-H, Chen C-Y, Chen L.-W., Chen Y-Y, Chu S.-Y., National Chiao Tung University, TW

In this study, we for the first time explore the dependence of the silicon fin width on electrostatic characteristic of HKMG bulk FinFET devices. On the same layout area, our study indicates that the narrow [...]

The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs

Deen J., Ranuárez J.C., Chen C-H, McMaster University, CA

The impact of the gate tunneling current (GTC) on the noise performance of MOSFETs with very thin gate oxides is studied by developing analytical expressions for the four parameters that describe the noise performance of [...]

RF MOSFET Noise Parameter Extraction and Modeling

Jamal Deen M., Chen C-H, McMaster University, CA

In this paper, a novel procedure for extracting the important noise sources in MOSFETs is reviewed. Examples of extracted noise sources as a function of frequency, bias and geometry are presented using devices from a [...]