Physics-Based, Non-Charge-Sheet Compact Modeling of Double-Gate MOSFETs


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A physics-based, non-charge-sheet analytic potential model is presented for undoped (or lightly doped) Double Gate (DG) MOSFETs. With only the mobile charge term included, Poisson’s equation is rigorously solved and the electrostatic potential is derived analytically. A drain current model is developed afterwards using current continuity equation. It is shown that the model continuously covers all MOSFET operation regions without any fitting parameters. No charge sheet approximation is invoked. Therefore, the model readily captures the volume inversion in the subthreshold region. The derivation is also applied to Surrounding Gate (SGT) MOSFETs, which similarly renders a continuous, closed-form solution of drain current.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 58 - 62
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0