Compact Modeling – Page 16 – TechConnect Briefs

Carbon Nanotube Transistor Compact Model

Deng J., Wan G.C., Wong H.-S., Stanford University, US

The principal challenges for the semiconductor industry at the nanoscale are: (1) power and performance optimization, (2) device fabrication and control of variations at the nanoscale, and (3) integration of a diverse set of materials [...]

Unified Compact Model for Generic Double-Gate MOSFETs

Zhou X., See G.H., Zhu G.J., Zhu Z.M., Chandrasekaran K., Zhu G.J., Zhu Z.M., Rustagi S.C., Lin S-H, Wei C.Q., Lim G.H., Nanyang Technological University, SG

A generic double-gate (DG) MOSFET follows a generalized (input) voltage equation from the first integral of Poisson equation and Gauss' law at the two gates, which is implicit and, in general, non-integrable when the channel [...]

Analytic Charge Model for Double-Gate and Surrounding-Gate MOSFETs

Yu B., Lu H., Lu W-Y, Lu H., Lu W-Y, Taur Y., UCSD, US

An analytic charge model for both double-gate (DG) and surrounding-gate (SG) MOSFETs is presented. With only the mobile charge term, Poisson’s equation is rigorous solved and the analytic electrostatic potential is derived. The development of [...]

A Unified View of Drain Current Models for Undoped Double-Gate SOI MOSFETs

Ortiz-Conde A., García-Sánchez F.J., Simón Bolívar University, VE

In this paper we discuss the compact modeling framework for undoped double-gate SOI MOSFETs. Core compact models, including the analysis for surface potential and drain current for various device structures are discussed and compared. Then, [...]

A PSP based scalable compact FinFET model

Smit G.D.J., Scholten A.J., Serra N., Pijper R.M.T., van Langevelde R., Mercha A., Gildenblat G., Klaassen D.B.M., NXP Semiconductors, NL

A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly [...]

3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices

Hamid H.A., Roig J., Universitat Rovira i Virgili, ES

We present 3-D analytical models for subthreshold swing, threshold voltage and threshold volatge roll-off of undoped FinFET devices. After solving the 3-D Poisson equation, in which the mobile charge term was included, we have obtained [...]

A Versatile Multigate MOSFET Compact Model: BSIM-MG

Hu C., Dunga M., Lin C.H., Lu D., Niknejad A., University of California-Berkeley, US

BSIM-MG is a surface-potential based compact model for multi-gate MOSFETs such as FinFETs fabricated on either SOI or bulk substrates. It can model transistors with the gate controlling two, three, or four sides of the [...]

Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

Fossum J.G., Chouksey S., University of Florida, US

Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents [...]

Compact Modeling Framework for Short-Channel DG and GAA MOSFETs

Børli H., Kolberg S., Fjeldly T.A., Norwegian University of Science and Technology, NO

To achieve sufficient accuracy in the compact modeling of short-channel, nanoscale DG and GAA MOSFETs, the multi-dimensionality of the body potential and the electronic charge distribution has to be accurately described. In sub-threshold, the device [...]

Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I. Effects of Remote Boundary Conditions and Body Contacts

Jie B.B., Sah C-T, Peking University, CN

Analytical solutions and computed characteristics for long-wide-channel thick-base MOS transistors are reported. The second generation industrial-consensus surface potential approach is used. Decomposition of the 2-Dimensional transistor problem into two 1-D problems follows the 1966-Pao-Sah current- [...]