Hot Carrier Effect and Oxide Reliability of T-FinFET Devices
He J., He X., He Y., Hu G., Li C., Liu J., Ma G., Pan J., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN
Hot-carrier effect and oxide reliability of CMOS T-FinFET with 2.1nm-thick gate-SiO2 were investigated. It was found that hot-carrier immunity improves as the T-FinFET fin width (body thickness) decreases, which facilitates gate-length scaling, while it is [...]