Johnson J. – TechConnect Briefs

New Elements and Features in the Process Design Kits for a FinFET Technology

Lu N., Baizley A., Guan X., Johnson J., McCullen J., Ozbek A., Rahman A., Wang H., Yu M., Zemke C., Rausch W., Wachnik R., IBM, US

Parasitic resistance is a primary performance constraint in FinFET technologies. We report that new and innovative elements and features have been introduced into Process Design Kits for 14nm FinFET technology. They enable accurate and efficient [...]

Design of a Small, Battery-Operated Nanoparticle Sizer

Erickson K., Johnson J., Grose M., Kolb J., Morell S., Caldow R., TSI Incorporated, US

A small, portable nanoparticle sizer has been developed to provide an affordable method to measure nanoparticle size distributions. The new nanoparticle sizer incorporates a SMPS Spectrometer into a chassis that is <1 cu.ft. The instrument [...]

Modeling of Gate Leakage, Floating Body Effect, and History Effect in 32nm HKMG PD-SOI CMOS

Deng Y., Rupani R.A., Johnson J., Springer S., IBM, US

The gate leakage, floating body effect, and history effect in 32nm HKMG PD-SOI CMOS have been extensively studied and analyzed. Based on the measured data, a comprehensive HKMG PD-SOI gate leakage model has been developed [...]

Impact of Gate-Induced-Drain-Leakage current modeling on circuit simulations in 45nm SOI technology and beyond

Wang H., Williams R., Wagner L., Johnson J., Hyde P., Springer S., IBM, US

Gate Induced Drain Leakage (GIDL) current is one of the most important leakage components in Silicon-on-Insulator (SOI) MOSFET devices. The effect of GIDL current reported before mainly focused on device characteristics in the OFF-state or [...]

Biofuels: Boom or Bust?

Johnson J., Palmacci E., Nerac, Inc., US

Corn-based ethanol has been touted by many as the panacea for America’s thirst for cheap and easy liquid energy. But this supposed cure for low-mileage woes is quickly showing itself to be yet another symptom [...]