Papers – Page 12 – TechConnect Briefs

Compact Model Application to Statistical/Probabilistic Technology Variations

Zhou X., Zhu G., Srikanth M., Selvakumar R., Yan Y., Chandra W., Zhang J., Lin S., Wei C., Chen Z., Nanyang Technological University, SG

ULSI systems are designed by electronic design automation (EDA) tools with performance figures-of-merit (FOM) measured by SPICE circuit simulation, in which nonlinear transistors are modeled by the compact model (CM) with its nominal set of [...]

A Scalable POWER MOSFET Model with an Integrated Body-Diode Including Reverse Recovery

Luo Z., Hall J., Xiao Y., Young A., Carroll R., Connerney D., Fairchild Semiconductor, US

Traditional high-voltage MOSFET models include parasitic source-bulk and drain-bulk diode models. However, these models are simplified diode models and lack some of the more detailed aspects of p-n junctions diodes such as breakdown voltage, advanced [...]

Compare and Contrast HiSIM-LDMOS and BSIM based compact model of High Voltage MOSFETs for Analog Applications

Young A., Hall J., Luo Z., Xiao Y., Connerney D., Fairchild Semiconductor, US

A pair of scalable spectre models, one utilizes the Surface Potential based HiSIM-LDMOS model, and the other, the conventional Vth-based BSIM3v3 model, were extracted based on a test vehicle designed with both Drain-Extended CMOS and [...]

High-Voltage MOSFET Model Valid for Device Optimization

Oritsuki Y., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Kikuchihara U. Feldmann H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Market for power devices are expanding due to the global warming problem. It is expected that the power devices play an important role for stopping the problem. For this purpose accurate compact models are highly [...]

Compact Modeling of Dynamic Threshold Voltage of FinFET High K Gate Stack and Application in Circuit Simulation

He F., Ma C., Li B., Lin X., Zhang L., Zhang X., Zhang L., Zhang X., Lin X., SZPKU, CN

Compact modeling study of dynamic threshold voltage of FinFET high K gate stack is proposed in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this [...]

Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics

Song Y., Zhang J., Zhang L.N., Zhang J., Zhang L.N., Zhuang H., Che Y.C., He J., Chan M., Peking University, CN

A computation efficient yet accurate surface potential-based analytic model for the symmetric double-gate MOSFETs is proposed to simulate double-gate device current-voltage characteristics in this paper. This model consists of a surface potential versus voltage input [...]

A Unified Compact model for FinFET and Silicon Nanowire MOSFETs

Zhu G.J., Zhou X., See G.H., Lin S-H, Wei C.Q., Zhang J.B., Nanyang Technological University, SG

A unified compact model for FinFET and Silicon Nanowire (SiNW) MOSFETs including all major short channel effects is presented. Source-Drain symmetry, which is a fundamental feature of an ideal MOSFET, is preserved. The unified compact [...]

Compact Model HiSIM-DG both for Symmetrical and Asymmetrical DG-MOSFET Structures

Ishimura K., Sadachika N., Kusu S., Miura-Mattausch M., Hiroshima University, JP

In this work, the circuit simulation model for DG-MOSFET named HiSIM-DG, has been developed based on the complete surface-potential-based description. The model solves the Poisson equation to the vertical direction iteratively in quasi-2 dimensions including [...]

Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

Monga U., Fjeldly T.A., Norwegian University of Science and Technology, NO

A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body [...]

MOSFET-Like Carbon Nanotube Field Effect Transistor model

Ahmadi M.T., Heong Y.W., Ismail R., University Technology Malaysia, MY

An analytical model that captures the essence of physical processes in a CNTFET’s is presented. The model covers seamlessly the whole range of transport from drift-diffusion to ballistic. It has been clarified that the intrinsic [...]