A unified compact model for FinFET and Silicon Nanowire (SiNW) MOSFETs including all major short channel effects is presented. Source-Drain symmetry, which is a fundamental feature of an ideal MOSFET, is preserved. The unified compact model is validated with experiment data including the first ever higher order derivatives of drain current for non-classical MOSFETs.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 588 - 591
Industry sector: Sensors, MEMS, Electronics
Topics: WCM - Compact Modeling