Compact Quantum Modeling Framework for Nanoscale Double-Gate MOSFET

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A quantum mechanical modeling framework for ultra-thin body double-gate MOSFETs operating in subthreshold and near-threshold regime is presented. For subthreshold conditions, we have assumed that the electrostatics is dominated by capacitive coupling between the body electrodes. Hence, the charge can be neglected in Poisson’s equation, thus decoupling the quantum effects and the electrostatics in the body. The potential in subthreshold is obtained as a solution of the 2-D Laplace equation with the help of conformal mapping techniques

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling
Published: May 3, 2009
Pages: 580 - 583
Industry sector: Sensors, MEMS, Electronics
Topics: WCM - Compact Modeling
ISBN: 978-1-4398-1784-1