Oritsuki Y. – TechConnect Briefs

High-Voltage MOSFET Model Valid for Device Optimization

Oritsuki Y., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Kikuchihara U. Feldmann H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Market for power devices are expanding due to the global warming problem. It is expected that the power devices play an important role for stopping the problem. For this purpose accurate compact models are highly [...]

HiSIM-HV: a complete surface-potential-based MOSFET model for High Voltage Applications

Oritsuki Y., Yokomiti M., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

We present here the high-voltage MOSFET model HiSIM-HV based on the complete surface-potential description. The model is valid both for symmetrical and asymmetrical structures with scaling properties for any structural variations valid for wide range [...]