The MOS transistor drain current is the (linear) superposition of independent and symmetrical effects of source and drain voltages. This basic property is not affected by the geometry or symmetry of the transistor, by the level of gate voltage or by narrow channel effects. However, it progressively deteriorates when the channel is shortened. Except in weak inversion, it is also degraded by structural non-homogeneities along the channel. This property can be exploited by means of the concept of pseudo-resistors to implement transistor-only linear circuits in the current domain.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 291 - 294
Industry sector: Sensors, MEMS, Electronics
Topics: WCM - Compact Modeling