Theory, Development and Applications of the Advanced Compact MOSFET (ACM) Model
Cunha A.I.A., Galup-Montoro C., Gouveia-Filho O.C., Schneider M.C., Universidade Federal de Santa Catarina, BR
This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We [...]