Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors


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An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the field related transit time components. Comparison to device simulation results show good agreement.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 265 - 270
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling
ISBN: 0-9767985-3-0