This paper presents a physics-based advanced compact MOSFET (ACM) model. The ACM model is composed of very simple expressions, valid for any inversion level, conserves charge and preserves the source-drain symmetry of the transistor. We highlight the theory and approximations behind the ACM model and show its usefulness as a powerful tool for characterization, simulation, and design.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 299 - 302
Industry sector: Sensors, MEMS, Electronics
Topic: WCM - Compact Modeling