Sensors, MEMS, Electronics – Page 114

Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application

Feldman W., Cumberbatch E., Abebe H., USC/ISI, US

Compact models for quantum mechanical behavior of transistors are becoming increasingly important as shrinking transistor sizes bring the oxide thickness to below four nanometers. An exponential approximation for the silicon potential is used to derive [...]

Compact Modeling of Signal Transients for Dispersionless Interconnects With Resistive, Capacitive and Inductive Terminal Loads

Liu Chi, Zhou Z., Lin X., Xia J., Zhang X., He J., Peking University, CN

In this paper, compact models for transient response of dispersionless interconnects are rigorously derived with resistive, inductive and capacitive terminal loads. The proposed compact models are verified by the HSPICE simulation with high accuracy and [...]

Bias Dependence of Low Frequency Noise in 90nm CMOS

Mavredakis N., Antonopoulos A., Bucher M., Technical University of Crete, GR

The bias dependence of low frequency noise (LFN) is investigated with measurements in 90nm CMOS. A recent charge-based LFN model combining carrier and mobility fluctuation components is compared to data from multi-finger devices with a [...]

Analytical model of quantum threshold voltage in short-channel nanowire MOSFET including band structure effects

Dura J., Martinie S., Munteanu D., Jaud M-A, Barraud S., Autran J-L, CEA/LETI/MINATEC, FR

The particular shape of Gate-All-Around (GAA) nanowires allows a much higher electrostatic control of the active region than conventional devices, as required for the integration at the end-of-roadmap. This architecture is suitable for ultra-scaled devices [...]

Analytical Solution of Surface Potential for Un-Doped Surrounding-Gate MOSFET

Dey A., DasGupta A., Arizona State University, US

Surrounding-Gate MOS transistors are seen as viable slternative to the problems of bulk MOSFET in deep sub-micron region. However modeling of drain current and capacitances, like other MOS structures require solution of an implicit equation. [...]

A Continuous Compact Model of Short-Channel Effects for Undoped Cylindrical Gate-All-Around MOSFETs

Cousin B., Reyboz M., Rozeau O., Jaud M-A, Ernst T., Jomaah J., CEA/LETI/MINATEC, FR

A continuous and explicit compact model of short-channel effects (SCEs) for undoped cylindrical Gate-All-Around (GAA) MOSFETs is presented in this paper. SCEs are implemented into an analytic and continuous drain-current model based on a surface [...]

Analytical Modeling of the Subthreshold Electrostatics of Nanoscale GAA Square Gate MOSFETs

Vishvakarma S.K., Fjeldly T.A., Norwegian University of Science and Technology, NO

An analytical model is presented for the 3-D electrostatics of lightly doped GAA square gate MOSFETs operating in the subthreshold domain. The model is based on the assumption of parabolic potential distributions in the directions [...]

Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model

Zhou X., Zhu G.J., Srikanth M.K., Lin S-H, Chen Z.H., Zhang J.B., Wei C.Q., Yan Y.F., Selvakumar R., Nanyang Technological University, SG

This paper presents benchmark tests of the unified compact model (Xsim) for double-gate (DG) and gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs, which has been developed over the years with the unified regional modeling (URM) approach. The [...]

Source/Drain Edge Modeling for DG MOSFET Compact Model

Nakagawa T., O’uchi S., Sekigawa T., Tsutsumi T., Hioki M., Koike H., AIST (National Institute of Advanced Industrial Science and Technology), JP

A compact model for four terminal double-gate MOSFET, based on double charge-sheet approximation with carrier velocity saturation, is discussed. Although it is a monolithic model both for conductance and intrinsic capacitances, it is not a [...]

Analytic Channel Potential Solution of Symmetric DG AMOSFETs

Chen L., Xu Y., Zhang L., Zhou W., Zhou X., Zhou W., Zhou X., He J., Peking University, CN

This paper presents an analytic channel potential solution of the symmetrical DG AMOSFETs. The proposed solution is derived from complete 1-D Poisson-Boltzmann equation by taking three components of net charge density (fixed charge, holes and [...]