The bias dependence of low frequency noise (LFN) is investigated with measurements in 90nm CMOS. A recent charge-based LFN model combining carrier and mobility fluctuation components is compared to data from multi-finger devices with a channel length of L=70nm. LFN in PMOS devices is higher than in NMOS for input referred noise; carrier number fluctuation model allows to well represent increased noise in strong inversion for either transistor type; the mobility fluctuation is significant only in deep weak inversion, and allows to represent the corresponding increase of noise. As a result, input referred noise shows a minimum in moderate inversion, increasing the attractiveness of moderate inversion design. The new model is implemented in the EKV3 MOS transistor compact model, and provides a good qualitative fit for both saturation and linear mode, from weak to strong inversion operation.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 805 - 808
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling