Sensors, MEMS, Electronics – Page 115

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

Abebe H., Cumberbatch E., Uno S., Tyree V., USC/ISI, US

The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) [...]

Subthreshold Quantum Ballistic Current and Quantum Threshold Voltage Modeling for Nanoscale FinFET

Monga U., Fjeldly T.A., UniK/Norwegian University of Science and Technology, NO

A subthreshold quantum ballistic current model and a quantum threshold voltage model is presented for nanoscale FinFET.The eigenvalues are determined by solving Schrödinger equation along the gate-to-gate axis. The current is then modeled using Natori’s [...]

A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel

Zhang J., Zhang L., He J., Zhang J., Zhang L., Zhou X., Zhou Z., Zhou X., Zhou Z., Peking University, CN

A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate from intrinsic to heavily doped channel with various structure parameter variations. The framework starts from one-dimension Poisson-Boltzmann’s equation. Based [...]

Modeling of Gate Leakage, Floating Body Effect, and History Effect in 32nm HKMG PD-SOI CMOS

Deng Y., Rupani R.A., Johnson J., Springer S., IBM, US

The gate leakage, floating body effect, and history effect in 32nm HKMG PD-SOI CMOS have been extensively studied and analyzed. Based on the measured data, a comprehensive HKMG PD-SOI gate leakage model has been developed [...]

Impact of Gate-Induced-Drain-Leakage current modeling on circuit simulations in 45nm SOI technology and beyond

Wang H., Williams R., Wagner L., Johnson J., Hyde P., Springer S., IBM, US

Gate Induced Drain Leakage (GIDL) current is one of the most important leakage components in Silicon-on-Insulator (SOI) MOSFET devices. The effect of GIDL current reported before mainly focused on device characteristics in the OFF-state or [...]

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

Zhou X., Zhou Z., Zhang J., Zhou X., Zhou Z., Lin X., He J., Peking University, CN

This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson’s equation for the heavily-doped region and lightly-doped region, respectively, and the analytic [...]

Theory of Bipolar MOSFET (BiFET) with Electrically Short Channels

Jie B.B., Sah C-T, Univesity of Florida, US

Bipolar MOSFETs with a pure base and two MOS gates usually have electrically short channels compared with its intrinsic Debye length of about 25μm at room temperatures. This short channel effect was missed by all [...]

Compact Modeling

Nano Crystalline Cellulose – Optical and Structural Properties by Molecular Dynamic Simulations

Kadiri Y., Simon D., Picard G., Ghozayel F., Lebreux J.-D., Ahuntsic College, CA

Structural and optical properties of Nano Crystalline Cellulose (NCC) in liquid solutions and in nematic films were investigated by large-scale molecular dynamics (MD) simulation using empirical Coulombian interaction potentials. The latter was modified by taking [...]

The challenges of statistical experiment design in process development

Ortloff D., Popp J., Process Relations GmbH, DE

Process development, especially in the high tech sectors, is an extremely complex task. The key challenge is developing a range of process recipes and testing these recipes via experimentation. These experiments can take a lot [...]