Xu Y. – TechConnect Briefs

Properties and characterisation of an aluminum – silicon nitride fiber powder metal composite

Dougherty T., Xu Y., Nuenz Limited, NZ

There is an increasing demand for new light-weighting materials to improve fuel-efficiency in the automobile and aerospace industries. This has led to an increase in the use of aluminum over traditional metals, such as steel, [...]

Analytic Channel Potential Solution of Symmetric DG AMOSFETs

Chen L., He J., Xu Y., Zhang L., Zhou W., Zhou X., Peking University, CN

This paper presents an analytic channel potential solution of the symmetrical DG AMOSFETs. The proposed solution is derived from complete 1-D Poisson-Boltzmann equation by taking three components of net charge density (fixed charge, holes and [...]

In Vivo Real Time Raman Spectroscopy Detection of Carbon Nanotube Kinetics in Lymph, Blood and Tissues

Biris A.S., Dervishi E., Galanzha E.I., Li Z., Mahmood M., Xu Y., Zharov V.P., University of Arkansas at Little Rock, US

The development of novel therapies using unique nanostructures for molecular targeting has become a major area of biological research. Here, we present the first report of the use of carbon nanotubes (CNTs) as high contrast [...]

Transient Behavior of Integrated Carbon Nanotube Field Effect Transistor Circuits

Marulanda Jo.M., Srivastava A., Xu Y., Louisiana State University, Baton Rouge, US

In this paper, a semi-classical one-dimensional electron fluid model for carbon nanotube interconnects is built which is based on a classical two-dimensional electron fluid theory taking into account electron-electron repulsive forces, which are significant in [...]

p-Type Single-Wall Garbon Nanotube Network on n-Type Si for Heterojunction Photovoltaic Cells

Biris A.R., Biris A.S., Dervishi E., Li Z., Mahmood M., Saini V., Xu Y., University of Arkansas at Little Rock, US

The solar cells based on high-density p-n heterojunctions between single wall carbon nanotubes (SWNTs) and n-type crystalline silicon were produced with airbrushing technique. The SWNTs/n-Si heterojunction is rectifying. Under optical excitation the numerous heterojunctions formed [...]

A Coarse-Grained Tight Binding Method for Electrostatic Analysis of Nanoelectromechanical Systems (NEMS)

Aluru N.R., Li G., Xu Y., Beckman Institute for Advanced Science and Technology, US

Silicon electrostatic nanoelectromechanical systems (NEMS) are one of the emerging applications in nanotechnology. As the critical length of a NEM structure shrinks to less than a few nanometers, classical models based on continuum approximations become [...]

Authors: Xu Y.