USC/ISI – TechConnect Briefs

Single-walled Carbon Nanotube (CNT) Field Effect Transistor Device Modeling

We have developed a surface potential based compact model for a single well semiconductor CNT field effect transistor. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are compared with [...]

Improved Compact Model of Quantum Sub-band Energy Levels for MOSFET Device Application

Feldman W., Cumberbatch E., Abebe H., USC/ISI, US

Compact models for quantum mechanical behavior of transistors are becoming increasingly important as shrinking transistor sizes bring the oxide thickness to below four nanometers. An exponential approximation for the silicon potential is used to derive [...]

Electrostatic Potential Compact Model for Symmetric and Asymmetric Lightly Doped DG-MOSFET Devices

Abebe H., Cumberbatch E., Uno S., Tyree V., USC/ISI, US

The analytical symmetric and asymmetric lightly doped DG-MOSFET device electrostatic potential compact model presented here improves the compact model accuracy without any iteration. The model is developed using the Lambert Function and a 2-dimensional (2-D) [...]

Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

Abebe H., Cumberbatch E., Morris H., Tyree V., USC/ISI, US

Quantum effects on MOS structures investigation.