Cousin B., Reyboz M., Rozeau O., Jaud M-A, Ernst T., Jomaah J.
Keywords: device modeling, gate-all-around (GAA) MOSFET, short-channel effects (SCE)
A continuous and explicit compact model of short-channel effects (SCEs) for undoped cylindrical Gate-All-Around (GAA) MOSFETs is presented in this paper. SCEs are implemented into an analytic and continuous drain-current model based on a surface potential approach. Results regarding I-V characteristics, for short-channel transistors, are compared to numerical simulations and validate our method in all operating regions.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 793 - 796
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling