Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type
Amakawa S., Feldmann U., Kikuchihara H., Mattausch H.J., Miura-Mattausch M., Miyake M., Hiroshima University, JP
Many possible future device structures are investigated in parallel to obtain highest performance features. It has been shown that an SOI-MOSFET with a thin body enables both high device performances and suppression of statistical variations. [...]