Compact Modeling of Long-Term MOSFET Degradation for Predicting Circuits Degradation
Miyamoto H., Ma C., Mattausch H.J., Miura-Mattausch M., Tanoue H., Tanimoto Y., Kikuchihara H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP
[Introduction] Prediction methods of long-term degradation of both p- and n-type metal oxide semiconductor field effect transistors (MOSFETs) in CMOS circuits is proposed. During CMOS circuit degradation, not all the MOSFETs but only several MOSFETs [...]