threshold voltage – Page 2 – TechConnect Briefs

Compact Modeling of Threshold Voltage in Nanoscale Strained-Si/SiGe MOSFETs

Nawal S., Venkataraman V., Kumar M.J., Indian Institute of Technology, IN

A simplae compact model for the threshold voltage of Strained Si/SiGe MOSFET is reported for the first time. This model accurately predicts the effects of Ge content and other device parameters on threshold voltage. The [...]

A New Grounded Lamination Gate (GLG) SOI MOSFET for Diminished Fringe Capacitance Effects

Kumar M.J., Venkataraman V., Gupta S.K., Indian Institute of Technology, IN

In this paper, we propose a novel device structure, known as the Grounded Laminated Gate (GLG) SOI MOSFET to eliminate the gate fringe field effects on the threshold voltage of short channel SOI MOSFETs. Our [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

A Compact Model for the Threshold Voltage of Silicon Nanowire MOS Transistors including 2D-Quantum Confinement Effects

Nehari K., Autran J-L, Munteanu D., Bescond M., L2MP-CNRS, FR

A quantum-mechanical compact model of the threshold voltage for quantum-wire (QW) MOSFETs has been developed. This approach is based on analytical 2D solutions for the decoupled Schrödinger and Poisson equations solved in a 2D cross-section [...]

One-Iteration Parameter Extraction for Length/width-dependent Threshold Voltage and Unified Drain Current Model

Chiah S.B., Zhou X., Chandrasekaran K., See G.H., Shangguan W., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG

This paper presents calibration approach for our unified length/width-dependent MOSFET drain current (Ids) model [1] with the length/width-dependent threshold voltage (Vt) model [2] for technology characterization in the entire geometry/bias range for CMOS shallow trench [...]

Unambiguous Extraction of Threshold Voltage Based on the Transconductance-to-Current Ratio

Cunha A.I.A., Schneider M.C., Galup-Montoro C., Caetano C.D.C., Machado M.B., Federal University of Santa Catarina, BR

This paper presents a very simple methodology for determining the threshold voltage. The procedure is based on the expressions of the Advanced Compact MOSFET (ACM) model, valid in all regimes of operation, which assures physical [...]

Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs

Chandrasekaran K., Zhou X., Chiah S.B., Nanyang Technology University, SG

Interest in nanotechnology has grown explosively in recent years because of the potential to beneficially impact almost every aspect of our lives. In the future, we can expect technologies that exploit unique nanometer scale phenomena [...]

Threshold-Voltage-Based Regional Modeling of MOSFETs with Symmetry and Continuity

Chiah S.B., Zhou X., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technology University, SG

This paper presents a unified threshold-voltage-based (Vt-based) MOSFET model, which maintains source¡Vdrain symmetry and allows accurate prediction of transconductance (gm) and drain conductance (gds) and their derivatives (gm' and gds') with smooth transitions across regions [...]

Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric Gates

Autran J-L, Munteanu D., Tintori O., Harrison S., Decarre E., Skotnicki T., CNRS, FR

A quantum-mechanical fully analytical model of the threshold voltage for long-channel Double-Gate MOSFETs has been developed. This model is based on analytical solutions for the decoupled Poisson and Schrödinger equations in the silicon film. The [...]

Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction

He J., Xi X., Chan M., Niknejad A., Hu C., University of California-Berkeley, US

The linear cofactor difference extrema of metal-oxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are [...]