Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions

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Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.

Synthesis and Thin-Film Transistor Performance of Fluorene-based Copolymers Containing Thiophene Moieties Having Different Position of Alkyl Side Chain

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We have synthesized fluorene-based copolymers (PF-HT-TT-TH and PF-TH-TT-HT) containing thiophene moieties having different position of alkyl side chain via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weight (Mn)s of PF-HT-TT-TH and PF-TH-TT-HT were respectively [...]