threshold voltage – TechConnect Briefs

Modeling Bias Stress Effect on Threshold Voltage for Amorphous Silicon Thin-Film Transistors

Shen C-H, National Chiao Tung University, TW

Amorphous silicon thin-film transistors (a-Si:H TFTs) are widely used in active-matrix backplanes for LCD displays on glass. Unfortunately, DC and dynamic characteristics of a-Si:H TFTs are sensitive [1]; in particular, they suffer form electric-field-induced threshold [...]

MOSFET threshold voltage: definition, extraction, and applications

Machado M.B., Siebel O., Schneider M.C., Galup-Montoro C., Federal University of Santa Catarina, BR

The threshold voltage VT is a fundamental parameter in the characterization of MOS transistors and should be used, whatever is the adopted model for the transistor. The classical definition of threshold: phis = 2phiF +V [...]

Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions

Ashraf N., Vasileska D., Arizona State University, US

Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.

Subthreshold Quantum Ballistic Current and Quantum Threshold Voltage Modeling for Nanoscale FinFET

Monga U., Fjeldly T.A., UniK/Norwegian University of Science and Technology, NO

A subthreshold quantum ballistic current model and a quantum threshold voltage model is presented for nanoscale FinFET.The eigenvalues are determined by solving Schrödinger equation along the gate-to-gate axis. The current is then modeled using Natori’s [...]

Multiplexed Localization in Bi-Layer Digital Microfluidic Systems

Abolhasani M., Devlin K.D., Najjaran H., Hoorfar M., Holzman J.F., The University of British Columbia Okanagan, CA

This paper reports a novel system-level design for digital microfluidic (DMF) devices. A DMF multiplexer structure based on a cross-referencing architecture is presented. The design makes use of bi-polar voltage activation and threshold effects to [...]

Nano-porous poly-silicon gated ion selective field effect transistors

Zehfroosh N., Shahmohammdi M., Mohajerzadeh S., University of Tehran, IR

We report the realization of ultra high sensitivity ion-selective field effect transistors (ISFET) devices by means of a nano-porous silicon structures placed on the gate region. Thanks to the presence of a nano-porous polysilicon film [...]

The Effects of Gamma rays on P-channel MOSFET

Iqbal M.A., Firdous U., Punjab University, PK

The effect of Gamma rays on PMOS is studied. The range of Gamma rays used from 1M.rad to 3M.rad. The device is exposed by gamma radiation and observes its parameters as threshold voltage, trans-conductance and [...]

Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Universidade Federal da Bahia - UFBA, BR

The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined [...]

3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices

Hamid H.A., Roig J., Universitat Rovira i Virgili, ES

We present 3-D analytical models for subthreshold swing, threshold voltage and threshold volatge roll-off of undoped FinFET devices. After solving the 3-D Poisson equation, in which the mobile charge term was included, we have obtained [...]

Synthesis and Thin-Film Transistor Performance of Fluorene-based Copolymers Containing Thiophene Moieties Having Different Position of Alkyl Side Chain

Kong H.Y., Lim E., Jung Y.K., Park M.-J., Ahn T., Yi M.H., Kang I.-N., Shim H.-K., KAIST, KR

We have synthesized fluorene-based copolymers (PF-HT-TT-TH and PF-TH-TT-HT) containing thiophene moieties having different position of alkyl side chain via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weight (Mn)s of PF-HT-TT-TH and PF-TH-TT-HT were respectively [...]