TCAD – Page 3 – TechConnect Briefs

Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors

Bakeroot B., Moens P., Vermandel M., Doutreloigne J., University of Gent, BE

Using TCAD, an n-type DEMOS (Drain Extended MOS) has been developed in a standard 0:35 mCMOS technology. The devices are optimised towards a Safe Operating Area (SOA) of 60 - 65 V using an n-type [...]

Numerical Simulation and Analytical Modeling of Strong-Inversion Gate Capacitance in Ultra-Short (30nm) MOSFETs

Sudhama C., Spulber O., McAndrew C., Thoma R., Motorola SPS, US

Bulk and novel MOSFET structures with gate-lengths in the 30nm regime are to become industry standards in ~2007. As devices are scaled down to these lengths, overlap- and fringe-capacitance between the gate and source/drain regions [...]

Predictive and Calibrated Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation

Scheiblin P., Roger F., Poncet D., Laviron C., Holliger P., Laugier F., Guichard E., Caire J.P., LETI, FR

In this work, we propose calibrated models for predictive simulation of low energy Arsenic, Boron and BF2 ion implantation in the suitable range for sub-100nm CMOS technology. The International Technology Roadmap for Semiconductors (ed. 1999) [...]

GEODESIC: A New and Extensible Geometry Tool and Framework with Application to MEMS

Wilson N., Wang K., Yergeau D., Dutton R.W., Stanford University, US

This paper will detail the capabilities of a new geometric modeling tool, called Geodesic, which is being released in source code form to the general community. In addition to providing geometric operations to create geometry [...]

CFD-Micromesh: A Fast Geometrical Modeling and Mesh Generation Tool for 3D Microsystem Simulations

Tan Z., Furmanczyk M., Turowski M., Przekwas A.J., CFD Research Corporation, US

In this work, a new fully automated geometrical modeling and meshing tool is described. It imports standard layout formats (CIF, GDSII, DXF), images (GIF, JPG), and 3D boundary representations (STL). A 3D model is then [...]

Automatic Device Design Optimization with TCAD Frameworks

Stockinger M., Selberherr S., Technical University of Vienna, AT

A design optimization method is presented which utilizes automatic optimization capabilities within TCAD frameworks. This method is applied to doping profile optimizations of ultra-low-power CMOS transistors with 0.25 and 0.1 um gate lengths. Two different [...]

Ab-Initio TCAD Models of Dopant Diffusion in Silicon

Nelson J.S., Wright A.F., Schultz P.A., Sandia National Laboratory, US

The rapid pace of the silicon microelectronics industry, and its need for physics-based TCAD models of dopant diffusion, is coinciding with the tremendous algorithmic and computational advances occurring within modern ab initio electronic structure methods. [...]

Living in an Expanding TCAD Space

Borucki L.J., Motorola, Inc., US

A substantial number of important industrial modeling and simulation problems lie outside of the scope of commercial TCAD (Technology Computer-Aided Design) software.The tools needed to solve such problems include a good PDE (Partial Differential Equation) [...]

Concurrent Process, Device and Integrated Circuit Development by Predictive Engineering for Smart Power Technologies

Bafleur M., Dinh T., Park H., Thoma R., Zirkle T., Wild A., LAAS/CNRS, FR

Predictive TCAD has been shown to be a powerful tool for the development of low voltage CMOS and VLSI memory technology development [1], [2] in which the main features of advanced p-channel and n-channel MOS [...]

Coupled Electro-Mechanical Simulation of Integrated Micro-Electro-Mechanical Systems

Lien H-P, Wiegele T.G., Bomholt L., Ruhl R., Integrated Systems Engineering AG, CH

Micro-electro-mechanical systems equipped with active devices (iMEMS) are commonly employed in sensor applications. In this paper, simulation of the mechanical and electrical properties of a deformable structure containing an integrated MOS sensor is described.