Predictive TCAD has been shown to be a powerful tool for the development of low voltage CMOS and VLSI memory technology development ,  in which the main features of advanced p-channel and n-channel MOS transistors could be accurately predicted. This paper presents the successful application of predictive engineering to the concurrent process, device and circuit development of a family of submicron smart power technologies. The implemented TCAD environment uses a combination of commercially available tools, proprietary software, improved process models and systematic, computer-aided calibration procedures. The importance of a systematic calibration of the TCAD tools is particularly emphasized and illustrated through the accuracy improvements made earlier the three versions of the technology. ne generation of the technology data base from simulated results allowed early circuit design then shortening the cycle time by 8-12 months.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
Published: April 6, 1998
Pages: 414 - 419
Industry sector: Sensors, MEMS, Electronics