TCAD – Page 2 – TechConnect Briefs

Computer-Based Process Design Support for MEMS

Wagener A., Popp J., Schmidt T., Hahn K., University of Siegen, DE

A process management and development system for MEMS design is introduced. It allows the specification of processes for specific applications and the tracking of the development procedures. Unlike in microelectronics the process configuration for MEMS [...]

The Modeling and Characterization of Nano-Scale MOSFET Resistance

Lee H.J., Lee J-H., Lee J-Y, Lee W.H., Lee H.J., Lee J-H., Lee J-Y, Lee W.H., Lee H.J., Lee J-H., Lee J-Y, Lee W.H., Kang E-S, Kang J-W, Lee H.J., Lee J-H., Lee J-Y, Lee W.H., Byun K.R., Kang E-S, Kang J-W, Hwang H-J., Kwon O-K., Sangmyung University, KR

It has been reported that both the shallow junction and the heavily doped extension as the methods to minimize the off-current and to stabilize the on-current of the sub-90nm scaled device, can solve the short-channel [...]

A Comprehensive Kinetic Model for Wet Oxidation of Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., Carette J., McMaster University, CA

Our objective is to study the kinetics of SiGe oxidation with a view to studying factors that would improve the quality of the oxide. We propose a model based on the simultaneous oxidation of both [...]

MEMulator: A fast and accurate Geometric Modeling, Visualization and Mesh Generation Tool for 3D MEMS Design and Simulation

Udeshi T., Parker E., Zyvex Corporation, US

We present novel voxel-based algorithms and their application to Micro Electro Mechanical System (MEMS) design and simulation. Voxel-based techniques are known for their robustness and flexibility and have been used for MEMS design and simulation. [...]

Practical Atomistic Dopant Diffusion Simulation of Shallow Junction Fabrication Processes and Intrinsic Fluctuations for sub-100nm MOSFETs

Hane M., Ezaki T., Ikezawa T., NEC Corporation, JP

We studied sophisticated shallow junction fabrication processes, i.e. spike-annealing and flash-lamp annealing, using our recently developed atomistic dopant diffusion simulator. Through its use of kinetic Monte Carlo procedure, considering all the possible charged species and [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

The Role of TCAD in Compact Modeling

Duane M., Applied Materials, US

This paper is an introduction to semiconductor process and device simulation and its role in compact modeling for circuit simulation. A brief history of TCAD is given. One use of TCAD is in the generation [...]

2D Analysis of Source-to-Drain Tunneling in Decananometer MOSFETs with the Density-Gradient Model

Schenk A., Wettstein A., Swiss Fed. Inst. of Technology, CH

The density gradient method is able to reproduce the quantum-mechanical charge density in CMOS devices. Its ability to describe gate tunneling currents is still a matter of dispute. This paper presents the first 2-dimensional application [...]

Introducing Monte Carlo Diffusion Simulation into TCAD tools

Strecker N., Moroz V., Jaraiz M., Avant!, US

Advantages and disadvantages of the alternative approaches to the dopant diffusion simulation are discussed. Complementary use of the Monte Carlo and continuum diffusion models is suggested. Application of the integrated commercially available process simulation tools [...]

Investigation of the Mechanism of Floating Node Assisted CMOS Latch-Up

Sim S-P., Guo P., Kordesch A., Chen W.F., Liu C-M., Yang C.Y., Lee K., Santa Clara University, US

A new phenomenon of floating node assisted CMOS latch-up is experimentally observed and investigated using TCAD simulation. Using test structures having parasitic bipolar transistors and an electrically floating N+ diffusion node located at various distances [...]