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HomeAffiliationsSandia National Laboratory

Affiliations: Sandia National Laboratory

Finite Element Modeling of a Microhotplate for Microfluidic Applications

Manginell R.P., Rosato D.A., Benson D.A., Frye-Mason G.C., Sandia National Laboratory, US
A hand-held chemical laboratory (mChemLab) is being developed that utilizes a silicon- nitride-supported microhotplate in the front-end, gas sampling and preconcentration stage. Device constraints include low-power (<200mW at 5V), rapid heating (<20msec), and a relatively [...]

A New Analytical Solution for Diaphragm Deflection and its Application to a Surface-Micromachined Pressure Sensor

Eaton W.P., Bitsie F., Smith J.H., Plummer D.W., Sandia National Laboratory, US
An analytical solution for large deflections of a clamped circular diaphragm with built-in stress is presented. The solution is directly applicable to micromachined pressure sensors. The solution is compared to finite element analysis results and [...]

Hydrodynamic Dispersion of a Neutral Non-Reacting Solute in Electroosmotic Flows

Griffiths S.K., Nilson R.H., Sandia National Laboratory, US
To investigate hydrodynamic dispersion in electroosmotic ?ow, we have derived an asymptotic series solution for the problem of two-dimensional species transport in a tube or channel. This solution is applicable to the late-time diÆusive and [...]

Ab-Initio TCAD Models of Dopant Diffusion in Silicon

Nelson J.S., Wright A.F., Schultz P.A., Sandia National Laboratory, US
The rapid pace of the silicon microelectronics industry, and its need for physics-based TCAD models of dopant diffusion, is coinciding with the tremendous algorithmic and computational advances occurring within modern ab initio electronic structure methods. [...]

IMAP: Interferometry for Material Property Measurement in MEMS

Jensen B.D., de Boer M.P., Miller S.L., Sandia National Laboratory, US
An interferometric technique has been developed for non-destructive, high-confidence, in-si tu determination of material properties in MEMS. By using interferometry to measure the full deflection curves of beams pulled toward the substrate under electrostatic loads, [...]

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