Predictive and Calibrated Simulation of Doping Profiles: Low Energy As, B and BF2 Ion Implantation

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In this work, we propose calibrated models for predictive simulation of low energy Arsenic, Boron and BF2 ion implantation in the suitable range for sub-100nm CMOS technology. The International Technology Roadmap for Semiconductors (ed. 1999) underlines the need for development of analytical models for ion implantation simulations, supported by Monte Carlo models. These models become more and more complex, from the simple Gaussian approximations to the latest double Pearson-4 distributions, or Legendre polynomials fitting. Leaving apart the domain of the sophisticated ion implantation models, we found that the value of the doping concentration itself could be expressed with a fair accuracy, as a function of the experimental conditions. The predictivity of this technique is insured by the use of Design Of Experiments and Response Surface Methodology.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems
Published: March 19, 2001
Pages: 390 - 393
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9708275-0-4