He J. – Page 3 – TechConnect Briefs

Analytic Model forAmorphous GST OTS in Phase Change Memory Cell with Hopping Transport

Wang C., Wang H., Wang W., Wang C., Wang H., Wang W., Cao Y., Wang C., Wang H., Wang W., Ye Y., He J., PKU-HKUST Shenzhen-Hongkong Institution, CN

This paper presents an analytic model for amorphous GST OTS in phase-change-memory cell with the hopping transport mechanism, which is widely used in the organic semiconductor device simulation. In this work an equivalent hopping probability [...]

Active Pixel CMOS Image Sensor with Single Transistor Architecture

Liang H., Zhang A., Zhang D., Zhang G., Zhang A., Zhang D., Zhang G., He J., Su Y., Zhang A., Zhang D., Zhang G., PKU-HKUST Shenzhen-Hongkong Institution, CN

CMOS active pixel image sensor with single transistor architecture (1T CMOS APS) is proposed in this paper and verified by experiment data. By switching the photo sensing pinned diode, reset and select can be achieved [...]

Field-Based 3D Capacitance Modeling for sub-45-nm On-Chip Interconnect

Zhang A., Zhao W., Ye Y., He J., Chen A., Chan M., Beijing University of Aeronautics and Astronautics, CN

Considering both two-dimensional and three-dimensional single wire above plate, the proposed method decomposes the electric field into various regions and gives solutions for each part. The total ground capacitance is the summation of all components. [...]

A Charge Based Non-Quasi-Static Transient Model for SOI MOSFETs

Zhang J., He H., He J., Ye Y., He H., He J., Chan M., Peking University, CN

A non-quasi-static (NQS) transient model for SOI MOSFETs is presented based on charge based dc model which is extensively verified with various structure parameters. From the inversion charge and current-continuity equation, the partial differential equation [...]

A Numerical Study on THZ-Wave Generation and Detection of Metal-Oxide-Semiconductor Field-effect Transistor

Wang C., Mou X., He H., He J., Ye Y., He H., He J., Cao Y., PKU-HKUST Shenzhen-Hongkong Institution, CN

A numerical method is developed in this paper to simulate FET-based THz wave generation and detection. The method is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with [...]

Modeling of Dynamic Threshold Voltage of High K Gate Stack and Application in FinFET Reliability

He H., He J., Ma C., Wang C., Zhang A., He H., He J., Peking Univeristy, CN

A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model [...]

Compact Modeling of Signal Transients for Dispersionless Interconnects With Resistive, Capacitive and Inductive Terminal Loads

Liu Chi, Zhou Z., Lin X., Xia J., Zhang X., He J., Peking University, CN

In this paper, compact models for transient response of dispersionless interconnects are rigorously derived with resistive, inductive and capacitive terminal loads. The proposed compact models are verified by the HSPICE simulation with high accuracy and [...]

Analytic Channel Potential Solution of Symmetric DG AMOSFETs

Chen L., Xu Y., Zhang L., Zhou W., Zhou X., Zhou W., Zhou X., He J., Peking University, CN

This paper presents an analytic channel potential solution of the symmetrical DG AMOSFETs. The proposed solution is derived from complete 1-D Poisson-Boltzmann equation by taking three components of net charge density (fixed charge, holes and [...]

A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel

Zhang J., Zhang L., He J., Zhang J., Zhang L., Zhou X., Zhou Z., Zhou X., Zhou Z., Peking University, CN

A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate from intrinsic to heavily doped channel with various structure parameter variations. The framework starts from one-dimension Poisson-Boltzmann’s equation. Based [...]

Non-Charge-Sheet Analytic Model for Ideal Retrograde Doping MOSFETs

Zhou X., Zhou Z., Zhang J., Zhou X., Zhou Z., Lin X., He J., Peking University, CN

This paper presents a physics-based non-charge-sheet analytic model for an ideal retrograde doping MOSFET structure. The model adopts an approach of solving Poisson’s equation for the heavily-doped region and lightly-doped region, respectively, and the analytic [...]