A Unified Charge-Based Model for SOI MOSFETs Valid from Intrinsic to Heavily Doped Channel

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A unified charge-based model for SOI MOSFETs is presented. The proposed model is valid and accurate from intrinsic to heavily doped channel with various structure parameter variations. The framework starts from one-dimension Poisson-Boltzmann’s equation. Based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived. And the unified terminal charge and intrinsic capacitance model is also derived under quasi-static case. The validity and accuracy of presented analytic model is proved by extensive verification with numerical simulation.

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 21, 2010
Pages: 765 - 768
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4398-3402-2