Chan M. – Page 2 – TechConnect Briefs

A Charge Based Non-Quasi-Static Transient Model for SOI MOSFETs

Zhang J., He H., He J., Ye Y., He H., He J., Chan M., Peking University, CN

A non-quasi-static (NQS) transient model for SOI MOSFETs is presented based on charge based dc model which is extensively verified with various structure parameters. From the inversion charge and current-continuity equation, the partial differential equation [...]

A Phase-Change Random Access Memory Model for Circuit Simulation

Chan M., HKUST, HK

A temperature tracking approach has been developed to model the property of phase-change memory (PCM) behavior under input pulses with arbitrary magnitude and shapes. By utilizing the Johnson-Mehl-Avrami equation to monitor the crystal fraction in [...]

Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics

Song Y., Zhang J., Zhang L.N., Zhang J., Zhang L.N., Zhuang H., Che Y.C., He J., Chan M., Peking University, CN

A computation efficient yet accurate surface potential-based analytic model for the symmetric double-gate MOSFETs is proposed to simulate double-gate device current-voltage characteristics in this paper. This model consists of a surface potential versus voltage input [...]

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

Che Y., Zhang L., Zhou X., He J., Chan M., Peking University, CN

In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

Surface Potential versus Voltage Equation from Accumulation to Strong Region for Undoped Symmetric Double-Gate MOSFETs and Its Continuous Solution

He J., Chen Y., Li B., Wei Y., Chan M., Peking University, CN

Surface potential is one key variable in DG MOSFET compact modeling. A complete surface potential versus voltage equation and its continuous solution from the accumulation to strong inversion region are presented in this paper for [...]

Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Models for Circuit Simulation

Miura-Mattausch M., Chan M., He J., Koike H., Mattausch H.J., Miura-Mattausch M., Nakagawa T., Park Y.J., Tsutsumi T., Yu Z., Hiroshima University, JP

We are reporting the construction of a common platform for compact model development based on the Verilog-A language and in particular a framework for efficient development of multi-gate MOSFET models for circuit simulation. Phenomena expected [...]

A Complete Analytic Surface Potential-Based Core Model for Undoped Cylindrical Surrounding-Gate MOSFETs

He J., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., Chan M., Peking University, CN

An analytic surface potential-based non-charge-sheet core model for cylindrical undoped surrounding-gate (SRG) MOSFETs is presented in this brief. Starting from the exact surface potential solution of the Poisson’s equation in the cylindric surrounding-gate (SRG) MOSFETs, [...]

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

He J., Liu F., Bian W., Tao Y., Wu W., Lu K., Wang T., Chan M., Peking University, CN

An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus [...]

Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs

Chan M., Wu W., HKUST, HK

The geometry-dependent parasitic components in multi-fin FinFETs are studied. The gate-resistance has a stronger dependent on the device geometry compared with the planar MOSFETs. Parasitic fringing capacitance and overlap capacitance become highly coupled to the [...]