Papers – Page 27 – TechConnect Briefs

Heterogeneous Nano-electronic Devices Enabled by Monolithic Integration of IIIV, Ge, and Si to expand future CMOS functionality

Thean A.V-Y., Collaert N., Waldron N., Merckling C., Witters L., Loo R., Mitard J., Rooyackers R., Vandooren A., Verhulst A., Veloso A., Pourghaderi A., Eneman G., Yakimets D., Huynh Bao T., Garcia Bardon M., Ryckaert J., Dehan M., Wambacq P., Caymax M., IMEC, BE

3D-IC’s by stacking and connecting dies of different functions with through-silicon via processes are emerging as an upcoming heterogeneous SOC enabler. Since connectivity between stacked layers may be limited by nearest-neighbor layers, the stagnation of [...]

Developing a Common Compact Modeling Platform for Model Developers and Users

Zhang L., Chan M., HKUST, HK

With the recent advance of CMOS technology to the 32nm range, there is a major concern to continue the scaling roadmap. Many new devices have been proposed, but selecting the right structure is not a [...]

A Threshold Voltage Modeling for a Spacer Trapping Memory Cell Using Verilog-A

Shrimali H., Liberali V., Università degli Studi di Milano, IT

The threshold voltage of the flash memories varies with respect to the applied voltages at the respective terminal of a memory cell. This paper presents the modeling of the threshold voltage variation for an embedded [...]

Silicon Nanowire Metal-Oxide-Semiconductor Field Effect Transistor NBTI Effect Modeling and Application in Circuit Performance Simulation

Ma C., He J., He Q., Chan M., Du C., He J., He Q., Ye Y., Zhao W., Wu W., Zhang X., Wang W., PKU-HKUST Shenzhen-Hongkong Institution, CN

A Negative Bias Temperature Instability (NBTI) model for the P-typed Silicon based nanowire MOS field effect transistor (SNWFET) and its application in the circuit simulation is studied in this paper. The model is derived from [...]

Simulation Study on Dopant Fluctuation Impact on SRG MOSFET Device and Circuit Performane

Wang H., He J., Liu Y., Peking University Shenzhen SOC Key Laboratory, CN

This paper investigates the impact of random dopant fluctuation on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom [...]

Compact Negative Bias Temperature Instability Model for Nanoscale FinFET Reliability Simulation

Zhang C., Wang W., Liu Y., Ye Y., Zhao W., He J., Wu W., Peking University Shenzhen SOC Key Laboratory, CN

A compact Negative Bias Temperature Instability (NBTI) model, which is based on a novel Reaction-Trapping (R-T) theory, is proposed to predict the static and dynamic NBTI degradation in nanoscale FinFET reliability simulation. This R-T theory [...]

Trap-induced apparent linearity of CNTFETs (invited)

Haferlach M., Claus M., TU Dresden, DE

Compared to conventional bulk semiconductors carbon nanotubes (CNTs) possess a number of properties which may make CNT technology superior for certain applications. In particular, the one-dimensional (1D) transport in CNTs leads not only to a [...]

Passive Elements Modeling in Microwave/Millimeter-wave application

Wang Y., Yao J., Luo J., Tang Y., Tsinghua University, CN

Passive elements (e.g., transmission line, transformer and balun) are widely used in Microwave/ Millimeter-wave (MMW) applications. Compared with time-consuming Electromagnetic (EM) simulation, equivalent-circuit compact models for these passive elements are more preferable for IC designers. [...]

RF-noise modeling in MOSFETs: excess noise, symmetry, and causality

Smit G.D.J., Scholten A.J., Pijper R.M.T., Tiemeijer L.F., van der Toorn R., Klaassen D.B.M., Scheer P., Juge A., NXP Semiconductors, NL

Modeling of RF-noise in MOSFET channels is one of the cornerstones for RF-CMOS-circuit design. Deep sub-micron technology nodes necessitate a proper treatment of excess noise as well as detailed modeling of parasitics. In addition, demanding [...]

Analysis of Breakdown Characteristics in Gate and Source Field-Plate AlGaN/GaN HEMTs

Onodera H., Hanawa H., Horio K., Shibaura Institute of Technology, JP

AlGaN/GaN HEMTs are now receiving great attention because of their applications to high-power microwave devices. It is known that the introduction of field plate enhances the power performance of AlGaN/GaN HEMTs, because the off-state breakdown [...]