Papers – Page 34 – TechConnect Briefs

Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates

Thakur P.K., Mahapatra S., Indian Institute of Science, Bangalore, IN

This paper, for the first time, explores the charcatersictics of MOS capacitor controlled by independent double gates by numerical simulation and analytical modeling for its possible use in RF circuit design as a varactor. By [...]

Discreteness and Distribution of Drain Currents in FinFETs

Lu N., IBM, US

It is likely that the characterization and modeling of a finFET will be carried out on a multi-fin structure, since it is a single electrical device functionally. Discreteness of multiple fins in a multi-fin FET [...]

Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles

Fjeldly T.A., Monga U., Norwegian University of Science and Technology, NO

A compact, unified and analytical model is presented for the 3D electrostatics of nanoscale, multigate MOSFETs. The model is based on solutions of the 3D Laplace equation (subthreshold) and Poisson’s equation (above threshold), where suitable [...]

Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow

Ueno F., Tanaka A., Miyake M., Iizuka T., Yamamoto T., Kikuchihara H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

High-voltage devices are utilized for a variety of applications, with application voltages ranging from a few volts to a few hundred volts. To develop efficient circuits for the variety of applications, accurate modeling of the [...]

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Iizuka T., Fukushima K., Tanaka A., Ueno M., Miura-Mattausch M., Hiroshima University, JP

A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared [...]

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

Khandelwal S., Fjeldly T.A., NTNU, NO

We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed [...]

Month: June 2012

Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates

Discreteness and Distribution of Drain Currents in FinFETs

Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles

Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow

Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

Model the AlGaN/GaN High Electron Mobility Transistors

An analytical 2DEG model considering the two lowest subbands

Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model

BSIM6: Symmetric Bulk MOSFET Model