The purpose of this paper is to illustrate a physically-based model allowing the statistical simulations of oxide leakage currents in MOS transistors and Floating Gate memories. This model computes the leakage current through defects randomly generated in the oxide, in case accounting for the formation of percolation paths. Furthermore, a calculation procedure has been developed to calculate the threshold voltage of FG memories from the simulated oxide leakage current in some reliability conditions, thus allowing to investigate their actual Flash data retention issues and their future trends. To this regards, it will be shown how this simulation model can be used to investigate threshold voltage shift occurring in retention conditions in FG memories after both Program/Erase cycles, i.e. electrical stress and radiation exposure.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 117 - 122
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications