Two-/Three-Dimensional GICCR for Si/SiGe Bipolar Transistors

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This paper presents the derivation of a two- and threedimensional (2D/3D) generalized Integral-Charge Control Relation (GICCR) that is based on an exact physical relation for the transfer current of bipolar transistors. The resulting compact equation includes spatial variations in bandgap, mobility, current density and potential in both vertical and lateral direction within a transistor structure. The derivation provides a clear meaning of (lateral) geometry dependent quantities and parameters, respectively, that have to be analytically described and used, respectively, in a compact transfer current relation.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 99 - 104
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0