Compact Modeling of Four-Terminal Junction Field-Effect Transistors


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This paper presents a physics -based compact model for a four terminal (independent top and bottom gates) junction field-effect transistor (JFET). The model describes the JFET’s dc and ac characteristics with a high degree of accuracy and continuity. Temperature effect is also accounted for, and the model is applicable for a wide range of operating temperatures.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 111 - 116
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0