Compact Modelling of High-Voltage LDMOS Devices

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In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances and the capacitances obtained from Y -parameters of an LDMOS device, show that MOS Model 20 provides accurate descriptions in all regimes of operation. For future developments, the inclusion of quasi-saturation in MOS Model 20 is demonstrated. Finally, the consequence of the lateral non-uniformity of the LDMOS device for compact modelling is discussed.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 93 - 98
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0