Papers – Page 23 – TechConnect Briefs

CMOS Architectures for NOR & NAND Logic Gates Using Single Electron Transistors

Venkataratnam A., Goel A.K., Michigan Technological University, US

Single electron transistor is one of the nano devices suitable for developing nano-scale logic circuits. In this paper, CMOS architectures for NOR and NAND gates have been proposed and their operational characteristics have been verified [...]

Tunable Wideband Microwave Band-Stop and Band-Pass Filters Using YIG/GGG-GaAs Layer Structures

Tsai C.S., Qiu G., Gao H., Li G.P., Yang L.W., Nikitov S.A., University of California Irvine, US

Future wideband communication and radar systems require high-speed electronically-tuned wideband microwave band-stop and band-pass filters. Ferromagnetic resonance (FMR)-based microwave devices possess the unique capability of high-speed electronic tunability, using magnetic field, for very high carrier [...]

Low Temperature Volatile-Organic-Compound (VOC) Sensor Based on Tungsten Oxide Nanorods

Kim Y-S, Kim Y.T., Kim Y-S, Kim Y.T., Lee K., Electronics and Telecommunications Research Institute (ETRI), KR

Tungsten oxide sensors were fabricated by using highly crystalline and homogeneous WO2.72 nanorods, previously synthesized and characterized with average 75-nm length and 4-nm diameter [1]. They provide unique opportunities for investigating the effects of size-controlled [...]

Impedance Characterization of Dielectric and Semiconducting Materials with Organic Capacitors for Organic Transistors

Li C.M., Pan L.K., Sun C.Q., Zhang J., Gamota D., Nanyang Technological University, SG

Characterization of the properties of OFET materials and devices have been conducted by I-V or C-V curves that used in MOS devices for provide information of basic shape, threshold voltage, mobility effects, velocity saturation, scaling, [...]

Quantum Information Processing with Nuclear Spin-Based Devices

Havel T.F., Cappellaro P., Ramanathan C., Cory D.G., Massachusetts Institute of Technology, US

This talk will illustrate the benefits offered by QIP with two devices which use quantum entanglement among nuclear spins to defeat the Heisenberg limits: (1) a spin gyroscope that operates by detecting the frequency shift [...]

A Nanocore/CMOS Hybrid System-on-Package (SoP) Architecture for Future Nanoelectronic Systems

Weerasekera R., Liu J., Zheng L-R, Tenhunen H., LECS/IMIT/KTH, SE

We propose Autonomous Error-Tolerant (AET) cellular network based architecture for future nano-electronic systems. Each AET cell consists of a nano-core, dedicated for local computing, CMOS cell-peripherals, responsible for cell I/O and System-level tasks, and their [...]

Observation of Soft-Breakdown in Ultra-Thin SiO2 Films under Repetitive Ramped Voltage Stress by Using Conductive Atomic Force Microscopy

Wu Y-L, Lin S-T, Liao J-C, National Chi-Nan University, TW

The degradation and breakdown characteristics of ultra-thin SiO2 (Tox = 5 nm) were investigated by using conductive AFM (C-AFM). Repetitive ramped voltage stress (RVS) was applied through the C-AFM tip to the oxide with polarity [...]

Study of Cutoff Frequency Calculation in the Subthreshold Regime of Operation of the SOI – MESFETs

Tarik K., Vasileska D., Thornton T.J., Arizona State University, US

Micropower circuits based on sub-threshold MOSFETs are used in a variety of applications ranging from digital watches to medical implants. The principal advantage of a transistor operating in the sub-threshold regime is the minimum power [...]

Influence of Si Nanocrystal Distribution on Electrical Characteristics of MOS Structures

Liu Y., Chen T.P., Ng C.Y., Ding L., Nanyang Technological University, SG

In this work, Si nanocrystals with different distributions were embedded in the gate oxide with ion implantation technique. C-V and time-domain capacitance measurements were conducted to study the electrical characteristics of MOS structures. It is [...]

XPS Studies of Silicon Nanoclusters/Nanocrystals Embedded in SiO2 Matrix

Chen T.P., Liu Y., Nanyang Technological University, SG

In this work, X-ray photoelectron spectroscopy (XPS) is used to study the annealing effects on the chemical structures, depth profiling of the chemical states and core-level shifts of the Si nanocrystals in the Si-implanted SiO2 [...]