Papers – Page 29 – TechConnect Briefs

High Speed Extraction of Process Model Parameters for 70nm Technology using a Distributed Genetic Algorithm

Murakawa M., Oda Y., Amakawa H., Baba S., Higuchi T., Nishi K., AIST, JP

In this paper, we show, for the first time, GA application to process model calibration. We propose a distributed GA based calibration technique combined with the traditional local optimization algorithm, which reduces time for calibration [...]

Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs

Nguyen C.D., Jungemann C., Neihues B., Meinerzhagen B., Sedlmeir J., Molzer W., ITEM-University of Bremen, DE

In this work a quantum correction model for the hole inversion layer based on the Improved Modified Local Density Approximation (IMLDA) and a corresponding channel mobility model compatible to the IMLDA quantum corrected spatial p-density [...]

Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation

Loechelt G.H., Sellers J., Morgan J., Azam M., ON Semiconductor, US

The optimization of bipolar transistors for high speed applications requires knowing the trade-off between several competing factors, including emitter-base junction charging time, base transit time, base-collector capacitance, high injection degradation, and collector debiasing [1]. Numerical [...]

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

Gehring A., Grasser T., Kosina H., Selberherr S., Institute for Microelectronics, Vienna, AT

We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and [...]

Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers

Choi H., Jeong Y., Park Y., Lee J., Leem J-Y, Leem J-Y, Jeon M., Jeong Y., Inje University, KR

We investigated the effect of AlGaAs/GaAs superlattice barriers on the optical properties of InAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. The samples used in the present work were grown by molecular beam epitaxy [...]

A Study on Growth of Ultrathin Silicon Dioxide Films by Rapid Thermal Oxidation

Zeng T., Doumanidis H.C., North Carolina State University, US

Silicon dioxide thin films are the basic components for microelectronics and other micro technologies. As the size of the transistors and relevant micro devices shrinks for faster and smaller chips and other microsystems, growth of [...]

Coupled Multiphysics Modeling of Semiconductor Lasers

Sikorski Z., Jiang Y., Czyszanowski T., Przekwas A., Turowski M., CFD Research Corporation, US

Comprehensive models of semiconductor lasers are required to predict realistic behavior of various laser devices for the spatially nonuniform gain that results due to current crowding. Nonuniform gain has visible effect on laser dynamics and [...]

A Methodology of Field-Emission Modeling with Space-Charge Effects

Tsai T-H, Tang H-K, Yang Y-J, National Taiwan University, TW

In this paper, we present a methodology for modeling and simulating 3D field-emission devices (FED) with space-charge effect. This approach applies a boundary-element-method (BEM) electrostatics solver [1] and an adaptive explicit integrator. The space charge [...]

Fullband Particle-based Simulation of Optical Excitation in Silicon Pin Diodes

Wigger-Aboud S., Saraniti M., Goodnick S., Brodschelm A., Leitenstorfer A., Rush Medical Center and Illinois Institute of Technology, US

A fullband particle-based simulator is used to model photo-generated electron-hole pairs in Si. This work is motivated by experimental measurements of optically excited Si pin diodes. Results will be compared qualitatively to investigate charge transport [...]

Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains

Morris H.C., De Pass M.M., San Jose State University, US

As MOSFET sizes have been reduced to nano-scale dimensions, existing models of device behavior, such as the drift diffusion equations, cease to be valid. In the nano domain, more fundamental equations, such as the Boltzmann [...]