Papers – Page 30 – TechConnect Briefs

Lateral-Cavity Design for Long-Wavelength Vertical-Cavity Lasers

Piprek J., Bregy A., Jayaraman V., Chiu Y-J, Bowers J., University of California, US

For more than a decade, long-wavelength vertical-cavity lasers (VCLs) for fiber-optic applications are subject of intense research efforts. GaAs-based VCLs emitting at shorter wavelength (0.85-micron) have been commercialized successfully, however, the challenge of transferring this [...]

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter

Kunz V.D., de Groot C.H., Anteney I.M., Abdul-Rahim A.I., Hall S., Hemment P.L.F., Wang Y., Ashburn P., University of Southampton, UK

In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates [...]

Nanoscale Control of Light-induced Degradation in Amorphous Silicon

Shirai K., Yamazaki Y., Katayama-Yoshida H., ISIR, Osaka University, JP

The major problem of amorphous silicon solar cell is the light-induced degration. A recent experiment shows that this problem may be solved by a CN treatment. In this paper, microscopic mechanism of this CN treatment [...]

Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs

Wakabayashi A., Kazami Y., Ozawa J., Mitani Y., Horio K., Shibaura Institute of Technology, JP

Effects of surface states on the kink phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to impact ionization of holes and the following hole trapping [...]

Single Transistor AND Gate

Chengalvala V., Zhang Y., Oklahoma State University, US

Double-gate SOI MOSFET structure opens the door for many novel devices by the coupling of the two gates. If the same voltage is applied to both gates, the depletion regions are equally partitioned. On the [...]

Monte Carlo and Energy Balance Simulations of a Deep Sub-micrometer Conventional and Asymmetric MOSFET Device Structures

Mannargudi A., Vasileska D., Arizona State University, US

We have simulated a 100 nm assymetric MOSFET device structure using both the Silvaco ATLAS energy balance model and the in-house 2D Monte Carlo particle-based simulator. Our investigations show that the energy balance simulation results [...]

Process for Extremely Thin Silicon-on-Insulator Wafer

Usenko A.Y., Carr W.N., Chen B., Silicon Wafer Technologies, Inc., US

We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before plasma processing. The buried defect layer is [...]

A Novel Method of Stereolithographic Alignment for MEMS Structures

Choudhury A., Hesketh P.J., Georgia Institute of Technology, US

In recent years there has been a fair amount of interest in integration of stereolithography with MEMS devices for purposes of packaging of microfluidic devices or to build new MEMS devices that are able to [...]

Local Oxidation Characteristics of Single Crystal Silicon

Ichida Y., Morimoto Y., Sato R., Saito N., Utsunomiya University, JP

Recently, the surface modification with an atomic force microscope (AFM) has attracted special interest as one of the surface processing techniques in a nanometer scale and investigated vigorously [1]. The nanometer-scale scratching (nanoscratching) that removes [...]

Nanomachining on Si (100) Surfaces Using an Atomic Force Microscope with Lateral Force Transducer

Ichida Y., Morimoto Y., Sato R., Murakami M., Utsunomiya University, JP

In recent years, the surface modification with an atomic force microscope (AFM) has attracted special interest as one of the surface processing techniques in a nanometer scale [1-3]. Particularly, this technique will play an increasingly [...]