Papers – Page 15 – TechConnect Briefs

The Role of TCAD in Compact Modeling

Duane M., Applied Materials, US

This paper is an introduction to semiconductor process and device simulation and its role in compact modeling for circuit simulation. A brief history of TCAD is given. One use of TCAD is in the generation [...]

Unified Statistical Modeling for Circuit Simulation

McAndrew C., Drennan P.G., Motorola, US

Accurate statistical simulation and modeling are important for IC design. Different types of statistical simulation require different types of statistical models. In this paper a unified approach to statistical modeling and characterization is presented. Based [...]

Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers

Zhou X., Nanyang Technological University, SG

This paper describes the ideas and philosophy behind a new compact model (CM) for deep-submicron MOSFETs, called Xsim, which has been developed from scratch over the past few years. Similarities to and differences from existing [...]

Automatic Generation of RF Compact Models from Device Simulation – Part I: Motivation and methodology

Luryi & A. Pacelli S., State University of New York at Stony Brook, US

We review a recently proposed methodology for automatic generation of equivalent circuits from physical device simulation. The method is based on the calibration of a simplified equivalent-circuit model on simulation results, and can achieve an [...]

CMOS RF Modeling and Parameter Extraction Approaches Taking Charge Conservation into Account

Je M., Kwon I., Han J., Shin H., Lee K., Korea Advanced Institute of Science and Technology, KR

A charge conserving small-signal equivalent circuit with very simple and accurate parameter extraction method for a three-terminal CMOS RF model is presented. We found that significant errors in circuit performances can be obtained if charge [...]

RF MOSFET Noise Parameter Extraction and Modeling

Jamal Deen M., Chen C-H, McMaster University, CA

In this paper, a novel procedure for extracting the important noise sources in MOSFETs is reviewed. Examples of extracted noise sources as a function of frequency, bias and geometry are presented using devices from a [...]

Present Status and Future Direction of BSIM SOI Model for High-Performance/Low-Power/RF Application

Fung S., Su P., Hu C., IBM Microelectronics, US

The recent progress of BSIM (Berkeley Short-channel IGFET Model) SPICE models extended for SOI transistors are reviewed. The models cover partially depleted (PD), fully depleted (FD) and dynamic depletion (FD) (automatically transition between PD and [...]

A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs

Fossum J.G., University of Florida, US

A process/physics-based compact model (UFPDB), unified for PD/SOI and bulk-Si MOSFETs with a single small set of parameters, is overviewed. The utility of UFPDB, e.g., for benchmarking PD/SOI and bulk-Si CMOS and for projecting performances [...]

Starting Over: gm/Id-Based MOSFET Modeling as a Basis for Modernized Analog Design Methodologies

Foty D., Binkley D., Bucher M., Gilgamesh Associates, US

A method of interpreting MOSFET behavior is described which is more coherent for modern analog CMOS circuit design. This method supercedes the use of simple but antiquated equations in design, and replaces them with an [...]

HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies

Miura-Mattausch M., Ueno H., Mattausch J.H., Miura-Mattausch M., Kumashiro S., Yamaguchi T., Yamashita K., Nakayama N., Hiroshima University, JP

Surface-potential-basedMOSFET modeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, [...]