RF MOSFET Noise Parameter Extraction and Modeling

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In this paper, a novel procedure for extracting the important noise sources in MOSFETs is reviewed. Examples of extracted noise sources as a function of frequency, bias and geometry are presented using devices from a 0.18 mm CMOS process and from RF noise measurements. A model for the channel noise current is proposed and comparisons to experimental data is presented. is obtained through either DC or a.c. measurements. The noise sources that must be characterized are the channel noise , induced gate noise and their correlation.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 694 - 697
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1