A method of interpreting MOSFET behavior is described which is more coherent for modern analog CMOS circuit design. This method supercedes the use of simple but antiquated equations in design, and replaces them with an approach based on the inversion coefficient of the individual transistors in the design. Measurements and modeling confirm that this method can be used directly to arbitrate among the various countervailing requirements of demanding analog designs.
Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 682 - 685
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling