Je M. – TechConnect Briefs

Physical Modeling of Substrate Resistance in RF MOSFETs

Han J., Je M., Shin H., Korea Advanced Institute of Science & Technology, KR

A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances [...]

Physical Modeling of Substrate Resistance in RF MOSFETs

Han J., Je M., Shin H., Korea Advanced Institute of Science & Technology, KR

A simple and accurate method is presented for extracting the substrate resistance of RF MOSFETs. The extraction results for 0.18 um MOSFETs are shown for various bias conditions. The dependence of the extracted substrate resistances [...]

CMOS RF Modeling and Parameter Extraction Approaches Taking Charge Conservation into Account

Je M., Kwon I., Han J., Shin H., Lee K., Korea Advanced Institute of Science and Technology, KR

A charge conserving small-signal equivalent circuit with very simple and accurate parameter extraction method for a three-terminal CMOS RF model is presented. We found that significant errors in circuit performances can be obtained if charge [...]