Papers – Page 9 – TechConnect Briefs

Squeezed Electrons in GaN Quantum Wells

Ridley B.K., Zakhleniuk N.A., Bennett C.R., University of Essex, UK

We present an analytic theory of hot-electron transport in a GaN quantum well containing a large-enough electron concentration for strong electron-electron scattering to establish a drifted distribution. Novel behaviour includes the squeezed electron distribution and [...]

Modelling of Atmosphere Sensitive Heterojunctions for Device Applications

Mangamma G., Gnanasekaran T., Indira Gandhi Centre For Atomic Research, IN

Simple and inexpensive methods of detecting pollutants in ambients are needed for maintenance of safe environment in modern industries. Chemical sensors based on catalytic combustion and using solid state electrolytes and semiconducting oxides etc. are [...]

A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film

Ravariu C., Ravariu F., Rusu A., Dobrescu D., Dobrescu L., Dobrescu D., Dobrescu L., Ravariu C., Ravariu F., Codreanu C., Avram M., University of Bucharest, RO

The analytical models for the electric field and potential distributions are necessary to establish the inversion or accumulation conditions at the front and back interfaces for a lot of SOI devices. The paper refers to [...]

Monte-Carlo Simulation of GaAs Devices Using High Generality Object-Oriented Code and Encapsulated Scattering Tables

Harris J., Vasileska D., Arizona State University, US

Many factors are responsible for the continued shift in industry prototyping preference from device fabrication to device simulation. One of the incentives for this transition is the generality and flexibility gained by avoiding a physical [...]

A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

Qian W., Zhou X., Wang Y., Lim K.Y., Nanyang Technological University, SG

In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with [...]

Inverse Modeling for C-V Profiling of Modulated-Doped Semiconductor Structures

Kokorev M.F., Maleev N.A., Pakhnin D.V., State Electrotechnical University, RU

Inverse modeling is a way for the verification of device models and for the parameter extraction. A technique of doping profile extraction of semiconductor structures based on the capacitance-voltage measurements (or C-V profiling) is used [...]

The 2.4F2 Memory Cell Technology with Stacked-Surrounding Gate Transistor (S-SGT) DRAM

Suzuki M., Endoh T., Sakuraba H., Masuoka F., Tohoku University, JP

This paper reports that the Stacked-Surrounding Gate Transistor (S-SGT) DRAM achieves a cell size of 2.4F 2. The S-SGT DRAM is structured by stacking several SGT-type cells in series vertically. In order to realize cell [...]

Equation of p-n Junction for High Current Density Models of Transistor

Baskys A., Semiconductor Physics Institute, LT

The results of theoretical and experimental investigations of p-n junction at junction voltages close to the potential barrier are presented. It is shown that in such a situation the voltage-current characteristic can be described by [...]

Study of Well Barrier Hole Burning in Quantum Well Bistable Lasers

Ganesh Madhan M., Vaya P.R., Gunasekaran N., Anna University, IN

Quantum carrier capture and release effects on optical bistability in multiple quantum well (MQW) lasers are studied using the well barrier hole burning model. The ratio of carrier capture to release time (h) is varied [...]

Modelling Multilayer Semiconductor Structures

Brecl K., Furlan J., University of Ljubljana, SI

The interest in multilayer thin-film semiconductor structures is becoming bigger day by day. For multilayer structures both, low-quality and good-quality materials are used. An extended Ebers-Moll model for simulating multiayer structures was developed. The standard [...]