Rusu A. – TechConnect Briefs

A Nano-Transistor with a Cavity

Ravariu C., Ravariu F., Rusu A., Profirescu M., Ravariu C., Ravariu F., Politehnica University of Bucharest, RO

A SOI nanotransistor with a cavity was simulated. The global current is a superposition of a tunnel current through the cavity and an inversion current at the film bottom. The tunnel source-drain current prevails in [...]

A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film

Ravariu C., Ravariu F., Rusu A., Dobrescu D., Dobrescu L., Dobrescu D., Dobrescu L., Ravariu C., Ravariu F., Codreanu C., Avram M., University of Bucharest, RO

The analytical models for the electric field and potential distributions are necessary to establish the inversion or accumulation conditions at the front and back interfaces for a lot of SOI devices. The paper refers to [...]

High Performance Magnetic Field Smart Sensor Arrays with Source Separation

Paraschiv-Ionescu A., Jutten C., Ionescu A.M., Paraschiv-Ionescu A., Chovet A., Rusu A., LIS, FR

A new approach to design high performance microsystems is proposed. It is based on the association between a low-cost sensor array and a multidimensional signal processing technique: the so-called 'blind source separation'. In order to [...]